Studies on Copper Plates for Cuprous Oxide Rectifier (Part 2). Effect of Impurities in Copper for Cuprous Oxide Rectifier Elements (2)
نویسندگان
چکیده
منابع مشابه
Low temperature growth technique for nanocrystalline cuprous oxide thin films using microwave plasma oxidation of copper
K. V. Rajani a *, S. Daniels, E. McGlynn, R. P. Gandhiraman, R. Groarke and P. J. McNally School of Electronic Engineering and NCPST, Dublin City University, Dublin 9, Ireland School of Physical Sciences and NCPST, Dublin City University, Dublin 9, Ireland BDI, Dublin City University, Dublin 9, Ireland School of Chemical Sciences, Dublin City University, Dublin 9, Ireland School of Electronic E...
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Three-dimensional (3D) nanoporous architectures can provide efficient and rapid pathways for Li-ion and electron transport as well as short solid-state diffusion lengths in lithium ion batteries (LIBs). In this work, 3D nanoporous copper-supported cuprous oxide was successfully fabricated by low-cost selective etching of an electron-beam melted Cu(50)Al(50) alloy and subsequent in situ thermal ...
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A glycine-mediated mixed-solvothermal approach has been proposed for the synthesis of novel Cu(2)O structures with different morphologies and the morphology effect on the antibacterial activity of the obtained Cu(2)O crystals has been studied, confirming that the obtained Cu(2)O crystals all show good antibacterial effects and that with the morphology of the Cu(2)O crystals changing from cubic ...
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This paper demonstrates that Cu2O nanoparticles form in the early stages of a solution-phase synthesis of copper nanowires, and aggregate to form the seeds from which copper nanowires grow. Removal of ethylenediamine from the synthesis leads to the rapid formation of Cu2O octahedra. These octahedra are introduced as seeds in the same copper nanowire synthesis to improve the yield of copper nano...
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Cuprous oxide (Cu2O) is an attractive material for solar energy applications, but its photoconductivity is limited by minority carrier recombination caused by native defect trap states. We examine the creation of trap states by cation vacancies, using first principles calculations based on density functional theory (DFT) to analyze the electronic structure and calculate formation energies. With...
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 1954
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.18.5_314